1.2kV SiC mosfet from Wolfspeed
- Autor:Ella Cai
- Zwolnij na:2017-04-20
Wolfspeeed has introduced a 1,200V 75mΩ SiC mosfet.
Called C3M0075120K, and available from Richardson RFPD, it comes in a four-lead TO-247-4 package – with a separate driver source explainng the fourth pin. The package has 8mm creepage distance between drain and source.
The intrinsic diode is saisd to be fast, with low reverse recovery (Qrr).
Applications in renewable energy, electric vehicle charging, high-voltage dc-dc conversion and switch-mode power supplies are expected.
Cree C3M0075120K:
1.2kV drain-source
30.8A continuous drain current at 25°C
75 mΩ Rds(on)
51nC total gate charge (Qg)
150°C max junction
58pF output capacitance (Coss)
220nC reverse-recovery charge (Qrr)
18ns reverse-recover (Trr)
Called C3M0075120K, and available from Richardson RFPD, it comes in a four-lead TO-247-4 package – with a separate driver source explainng the fourth pin. The package has 8mm creepage distance between drain and source.
The intrinsic diode is saisd to be fast, with low reverse recovery (Qrr).
Applications in renewable energy, electric vehicle charging, high-voltage dc-dc conversion and switch-mode power supplies are expected.
Cree C3M0075120K:
1.2kV drain-source
30.8A continuous drain current at 25°C
75 mΩ Rds(on)
51nC total gate charge (Qg)
150°C max junction
58pF output capacitance (Coss)
220nC reverse-recovery charge (Qrr)
18ns reverse-recover (Trr)
