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Home > News > Industry News > X-FAB to double SiC capacity

X-FAB to double SiC capacity

  • Author:Ella Cai
  • Release on:2018-09-03
In preparation for doubling capacity, X-FAB Texas has purchased a second heated ion implanter for use in manufacturing 6-inch SiC wafers.

Delivery of this heated ion implanter is expected by the end of 2018, and production release is planned during the first quarter of 2019 in time to meet projected near-term demand.

X-FAB was the first wafer foundry to offer SiC manufacturing on 6-inch wafers. This doubling of X-FAB’s SiC process capacity furthers its strategy to remain the premier 6-inch SiC wafer foundry, and demonstrates the Company’s commitment to SiC technology and the SiC foundry business model.

Advantages of X-FAB’s 6-inch SiC process capabilities for power semiconductors include superior high voltage operation, significantly lower transistor On-resistance, significantly lower transmission and switching losses, extended high temperature operation as high as 400°F/204°C, higher thermal conductivity, very high frequency operation, and lower parasitic capacitance.

X-FAB’s SiC process capabilities allow customers to realize high efficiency power semiconductor devices including high power MOSFETs, JFETs, and Schottky diodes.