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Home > News > Industry News > Wolfspeed 28V GaN HEMT power d.....

Wolfspeed 28V GaN HEMT power devices capable of 8GHz

  • Author:Ella Cai
  • Release on:2017-09-13
Wolfspeed has introduced 28V GaN HEMT RF power devices  capable of higher frequency operation to 8GHz.

The 28V GaN HEMT devices are made on Wolfspeed’s 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs.

Available as both packaged devices (CG2H400 Series) and bare die (CG2H800 Series), the new GaN HEMTs deliver 33% higher frequency operation to 8GHz (from 6GHz), an additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating efficiency compared to Wolfspeed’s earlier generation devices.

“By moving to our 0.25µm process for these next-generation devices, we are able to deliver significant performance advantages to a wide range of customers while maintaining the superior reliability these types of applications require,” says Wolfspeed’s Jim Milligan, “offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”

The higher efficiency (up to 70% at PSAT) and higher bandwidth capability makes these devices suitable for RF power amplifier applications, including military communications systems, radar equipment (UHF, L-, S-, C-, and X-band), electronic warfare (EW) and electronic counter-measure (ECM) systems, as well as commercial RF applications in the industrial, medical, and scientific (ISM) band.