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Home > News > Industry News > Toshiba develops quad level ce.....

Toshiba develops quad level cell NAND

  • Author:Ella Cai
  • Release on:2017-06-29
‘Multi-bit cell flash memories store data by managing the number of electrons in each individual memory cell,’ says Toshiba, ‘achieving QLC technology posed a series of technical challenges, as increasing the number of bit-per-cell by one within same electron count requires twice the accuracy of TLC technology.’

The prototype chip stores 768Gb/96GB of data using the same process technology as is used for 64-layer 3D NAND. 

Shipment of prototypes to SSD and SSD controller vendors for evaluation and development purposes started in early June. 

The QLC 3D flash memory enables a 1.5-terabyte (TB) device with a 16-die stacked architecture in a single package – the industry’s largest capacity. 

Toshiba already mass produces 64-layer 256Gb/32GB  devices. 

Toshiba has also developed prototype samples  of 96-layer 3D NAND using triple-level cell (TLC) technology. Samplesare scheduled for release in the second half of 2017 and mass production is targeted for 2018. 

The 96-layer process is expected to deliver 512Gb devices and to use  4-bit-per-cell (quadruple-level cell, QLC) technology, in the near future. 

This 96-layer TLC chip will be manufactured at Yokkaichi in Fab 5, the new Fab 2, and Fab 6, which will open in summer 2018.