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Home > News > Industry News > Infineon sampling 650V TRENCHS.....

Infineon sampling 650V TRENCHSTOP IGBT6

  • Author:Ella Cai
  • Release on:2018-08-14
Infineon is sampling its latest  TRENCHSTOP IGBT6 technology with a 650 V blocking voltage.

The trench and field-stop technology co-packed with a soft, fast recovery anti-parallel Rapid 1 diode translates into reduced losses.

The building block for motor drives up to 1 kW is marked by a good thermal performance, especially at higher switching frequencies improving reliability and design margin.

Key features of the 650 V TRENCHSTOP IGBT6 are very low V CE(sat) and V f as well as a short-circuit protection capability of 3 μsec.

It is optimized for switching frequencies ranging between 5 kHz and 30 kHz and suitable for applications that need to control the EMI noise efficiently.

Sampling now are current classes from 8 to 15 A in a TO-220FP package. Other package types will be introduced 2019.