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Home > News > Industry News > 4DS makes ReRAM as fast as DRA.....

4DS makes ReRAM as fast as DRAM

  • Author:Ella Cai
  • Release on:2017-06-22
4DS Memory, the Australian ReRAM specialist, says it has improved its ReRAM through architectural changes which now make its read times comparable to DRAM.

4DS calls its memory Interface Switching ReRAM and claims it needs minimal error correction. That delivers the faster read speed.

4DS has scaled its technology to 40nm and is now focussed on scaling it further.

4DS sees the technology as a competitor to the Intel/Micron 3D X-Point taking slots in the space between DRAM and NAND.