First Gbit MRAM
- 著者:Ella Cai
- 公開：:2017-08-08
Everspin has begun sampling a 1Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers.
A high-endurance, persistent memory with a DDR4- compatible interface, the chip enables storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries.
Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs.
The 1 Gb MRAM is produced in 28nm CMOS on 300mm wafers on GloFo’s perpendicular magnetic tunnel junction (pMTJ) technology.
The rapid development of the 1Gb part is a direct result of the high degree of scalability of the pMTJ, moving from 40nm to 28nm processes in less than one year.
A high-endurance, persistent memory with a DDR4- compatible interface, the chip enables storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries.
Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs.
The 1 Gb MRAM is produced in 28nm CMOS on 300mm wafers on GloFo’s perpendicular magnetic tunnel junction (pMTJ) technology.
The rapid development of the 1Gb part is a direct result of the high degree of scalability of the pMTJ, moving from 40nm to 28nm processes in less than one year.
