Samsung develops Tbit V-NAND
- 作者：Ella Cai
- 发布时间：：2017-08-11
Samsung says it has produced a Terabit 3D NAND flash memory which will be in production next year.
Samsung’s intention is to stack 16 Tbit die to deliver a 2TB memory in a chip package.
The Tbit chip has 96 layers and four-bit-per-cell (QLC) technology.
Samsung’s intention is to stack 16 Tbit die to deliver a 2TB memory in a chip package.
The Tbit chip has 96 layers and four-bit-per-cell (QLC) technology.
